p-channel 30-v (d-s) mosfet
v ds (v) i d (a) -5 -4.2 symbol limit units v ds -30 v gs 20 t a =25c -5 t a =70c -4 i dm -20 i s 2.4 a t a =25c 2 t a =70c 1.3 t j , t stg -55 to 150 c symbol maximum units 62.5 110 notes a. surface mounted on 1 x 1 fr4 board. b. pulse width limited by maximum junction temperature maximum junction-to-ambient a t <= 10 sec steady state thermal resistance ratings c/w parameter r ja a i d operating junction and storage temperature range p d w power dissipation a continuous source current (diode conduction) a pulsed drain current b continuous drain current a gate-source voltage absolute maximum ratings (t a = 25c unless otherwise noted) v parameter drain-source voltage product summary -30 r ds(on) (m) 54 @ v gs = -10v 75 @ v gs = -4.5v key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed typical applications: ? battery powered instruments ? portable computing ? mobile phones ? gps units and media players tsop - 6 1 ao6405/ MC6405 www.freescale.net.cn freescale
parameter symbol test conditions min typ max unit gate-source threshold voltage v gs(th) v ds = v gs , i d = -250 ua 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = -24 v, v gs = 0 v 1 v ds = -24 v, v gs = 0 v, t j = 55c 10 on-state drain current i d(on) v ds = -5 v, v gs = -4.5 v 10 a v gs = -10 v, i d = -4 a 54 v gs = -4.5 v, i d = -3.6 a 75 forward transconductance g fs v ds = -15 v, i d = -4 a 11 s diode forward voltage v sd i s = 1.2 a, v gs = 0 v 0.78 v total gate charge q g 4.9 gate-source charge q gs 1.7 gate-drain charge q gd 2.3 turn-on delay time t d(on) 3.9 rise time t r 11.7 turn-off delay time t d(off) 19.1 fall time t f 10.1 input capacitance c iss 356 output capacitance c oss 38 reverse transfer capacitance c rss 17 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. ns v ds = -15 v, v gs = -4.5 v, i d = -4 a dynamic drain-source on-resistance m nc v dd = -15 v, r l = 3.8 , i d = -4 a, v gen = -10 v, r gen = 6 zero gate voltage drain current static pf v ds = -15 v, v gs = 0 v, f = 1 mhz ua electrical characteristics i dss r ds(on) 2 ao6405/ MC6405 www.freescale.net.cn freescale freescale is an equal opportunity/affirmative action employer. with such unintended or unauthorized use, even if such claim alleges that freescale was negligent regarding the design or manufacture of the part. where personal injury or death may occur. should buyer purchase or use freescale products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, customer application by customers technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale applications intended to support or sustain life, or for any other application in which the failure of the freescale product could create a situation consequential or incidental damages. typical parameters which may be provided in freescale data sheets and/or specifications can and do vary or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising out freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, in different applications and actual performance may vary over time. all operating parameters, including typicals must be validated for each products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated
1. on-resistance vs. drain current 2. transfer characteristics 3. on-resistance vs. gate-to-source voltage 4. drain-to-source forward voltage 5. output characteristics 6. capacitance typical electrical characteristics 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0 1 2 3 4 5 6 rds(on) - on - resistance( ) id - drain current (a) 4.5 v 3.5 v 6 v, 8v, 10v 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 id - drain current (a) vds - drain - to - source voltage (v) 10v, 8v, 6v 3.5v 4.5 v 0 0.05 0.1 0.15 0.2 0.25 0.3 0 2 4 6 8 10 rds(on) - on - resistance( ) vgs - gate - to - source voltage (v) tj = 25 c i d = - 4 a 0 1 2 3 4 5 6 0 1 2 3 4 id - drain current (a) vgs - gate - to - source voltage (v) tj = 25 c 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 is - source current (a) vsd - source - to - drain voltage (v) tj = 25 c 0 100 200 300 400 500 0 5 10 15 20 capacitance (pf) vds - drain - to - source voltage (v) ciss coss crss f = 1mhz 3 ao6405/ MC6405 www.freescale.net.cn freescale
7. gate charge 9. safe operating area 10. single pulse maximum power dissipation 11. normalized thermal transient junction to ambient 8. normalized on-resistance vs junction temperature typical electrical characteristics 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 11 vgs - gate - to - source voltage (v) qg - total gate charge (nc) i d = - 4 a v ds = - 15 v 0.01 0.1 1 10 100 0.1 1 10 100 id current (a) vds drain to source voltage (v) 10 us 100 us 1 ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0 5 10 15 20 25 30 35 40 0.001 0.01 0.1 1 10 100 1000 peak transient power (w) t1 time (sec) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 time (sec) r ja (t) = r(t) x r ja r ja = 110 c /w t j - t a = p x r ja (t) duty cycle, d = t 1 / t 2 d = 0.5 0.2 0.1 0.05 0.02 single pulse p( pk ) t 1 t 2 0.5 1 1.5 2 -50 -25 0 25 50 75 100 125 150 rds(on) - on - resistance( ) (normalized) tj - junctiontemperature( c) 4 ao6405/ MC6405 www.freescale.net.cn freescale
package information note: 1. all dimension are in mm. 2. package body sizes exclude mold flash, protrusion or gate burrs. mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side. 3. package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 4. the package top may be smaller than the package bottom. 5. dimension "b" does not include dambar protrusion. allowable dambar protrusion shall be 0.08 mm total in excess of "b" dimension at maximum material condition. the dambar cannot be located on the lower radius of the foot. 5 ao6405/ MC6405 www.freescale.net.cn freescale
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